BYW80-200G, TO220-2
Quantity
Unit price
1-4
3.20$
5-9
2.15$
10-19
2.00$
20-49
1.90$
50+
1.82$
| Quantity in stock: 2 |
BYW80-200G, TO220-2. Housing: TO220-2. Assembly/installation: THT. Diode type: switching diode. Driving current: 16A. Heatsink Thickness: 1.15...1.39mm. Max reverse voltage: 200V. Packaging: tubus. Properties of semiconductor: ultra-fast switching. Pulse current max.: 100A. RoHS: yes. Semiconductor structure: diode. Original product from manufacturer: Onsemi. Quantity in stock updated on 11/01/2025, 11:03
BYW80-200G
12 parameters
Housing
TO220-2
Assembly/installation
THT
Diode type
switching diode
Driving current
16A
Heatsink Thickness
1.15...1.39mm
Max reverse voltage
200V
Packaging
tubus
Properties of semiconductor
ultra-fast switching
Pulse current max.
100A
RoHS
yes
Semiconductor structure
diode
Original product from manufacturer
Onsemi