BYV79E-200, TO-220, 12.7A, 14A, 150A, TO-220-2, 200V

BYV79E-200, TO-220, 12.7A, 14A, 150A, TO-220-2, 200V

Quantity
Unit price
1-4
1.81$
5-24
1.59$
25-49
1.43$
50-99
1.27$
100+
1.10$
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Quantity in stock: 143

BYV79E-200, TO-220, 12.7A, 14A, 150A, TO-220-2, 200V. Housing: TO-220. Forward current (AV): 12.7A. Average Rectified Current per Diode: 14A. IFSM: 150A. Housing (according to data sheet): TO-220-2. VRRM: 200V. Assembly/installation: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Diode Configuration: independent. Diode type: rectifier diode. Forward Voltage (Max): <1.05V / 14A. Forward voltage Vf (min): 0.83V. Function: ultra fast rectifier diode. Information: -. MRI (max): 50uA. MRI (min): 5uA. MSL: -. Mounting Type: THT. Number of terminals: 2. Quantity per case: 1. Reverse Recovery Time (Max): 30ns. RoHS: yes. Semiconductor material: silicon. Series: BYV79. Spec info: Ifsm 150Ap t=10ms. Temperature: +150°C. Threshold voltage Vf (max): 1.05V. Trr Diode (Min.): 20 ns. Original product from manufacturer: Nxp Semiconductors. Quantity in stock updated on 10/31/2025, 08:15

Technical documentation (PDF)
BYV79E-200
27 parameters
Housing
TO-220
Forward current (AV)
12.7A
Average Rectified Current per Diode
14A
IFSM
150A
Housing (according to data sheet)
TO-220-2
VRRM
200V
Assembly/installation
PCB through-hole mounting
Dielectric structure
Anode-Cathode
Diode Configuration
independent
Diode type
rectifier diode
Forward Voltage (Max)
<1.05V / 14A
Forward voltage Vf (min)
0.83V
Function
ultra fast rectifier diode
MRI (max)
50uA
MRI (min)
5uA
Mounting Type
THT
Number of terminals
2
Quantity per case
1
Reverse Recovery Time (Max)
30ns
RoHS
yes
Semiconductor material
silicon
Series
BYV79
Spec info
Ifsm 150Ap t=10ms
Temperature
+150°C
Threshold voltage Vf (max)
1.05V
Trr Diode (Min.)
20 ns
Original product from manufacturer
Nxp Semiconductors

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