| Quantity in stock: 57 |
BYV27-200-TAP, SOD-57 ( Glass ), 2A, 50A, 2A, SOD-57 Glass ( 4.5x3.6mm ), 200V
Quantity
Unit price
1-4
0.78$
5-24
0.66$
25-49
0.59$
50-99
0.53$
100+
0.43$
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| Equivalence available | |
| Quantity in stock: 1947 |
BYV27-200-TAP, SOD-57 ( Glass ), 2A, 50A, 2A, SOD-57 Glass ( 4.5x3.6mm ), 200V. Housing: SOD-57 ( Glass ). Housing (JEDEC standard): -. Forward current (AV): 2A. IFSM: 50A. Forward current [A]: 2A. Housing (according to data sheet): SOD-57 Glass ( 4.5x3.6mm ). VRRM: 200V. Assembly/installation: PCB through-hole mounting. Close voltage (repetitive) Vrrm [V]: 200V. Component family: Fast rectifier diode (tr<500ns). Configuration: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 0.88V. Function: Ultra Fast Avalanche Sinterglass Diode. Ifsm [A]: 50A. Leakage current on closing Ir [A]: 1uA..150uA. MRI (max): 150uA. MRI (min): 5uA. Max temperature: +175°C.. Number of terminals: 2. Number of terminals: 2. Operating temperature: -55...+175°C. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: IFSM--50App, t=10mS. Switching speed (regeneration time) tr [sec.]: 25 ns. Threshold voltage Vf (max): 1.07V. Trr Diode (Min.): 25 ns. [V]: 1.07V @ 3A. Original product from manufacturer: Vishay. Quantity in stock updated on 10/31/2025, 08:15
BYV27-200-TAP
30 parameters
Housing
SOD-57 ( Glass )
Forward current (AV)
2A
IFSM
50A
Forward current [A]
2A
Housing (according to data sheet)
SOD-57 Glass ( 4.5x3.6mm )
VRRM
200V
Assembly/installation
PCB through-hole mounting
Close voltage (repetitive) Vrrm [V]
200V
Component family
Fast rectifier diode (tr<500ns)
Configuration
PCB through-hole mounting
Dielectric structure
Anode-Cathode
Forward voltage Vf (min)
0.88V
Function
Ultra Fast Avalanche Sinterglass Diode
Ifsm [A]
50A
Leakage current on closing Ir [A]
1uA..150uA
MRI (max)
150uA
MRI (min)
5uA
Max temperature
+175°C.
Number of terminals
2
Number of terminals
2
Operating temperature
-55...+175°C
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
IFSM--50App, t=10mS
Switching speed (regeneration time) tr [sec.]
25 ns
Threshold voltage Vf (max)
1.07V
Trr Diode (Min.)
25 ns
[V]
1.07V @ 3A
Original product from manufacturer
Vishay