BY500-800, DO-201, 800V, 5A, 5A, 200A, 5A, DO-201 ( 7.5x5.4mm )

BY500-800, DO-201, 800V, 5A, 5A, 200A, 5A, DO-201 ( 7.5x5.4mm )

Quantity
Unit price
1-4
0.25$
5-24
0.23$
25-49
0.20$
50-99
0.18$
100+
0.16$
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Equivalence available
Quantity in stock: 639

BY500-800, DO-201, 800V, 5A, 5A, 200A, 5A, DO-201 ( 7.5x5.4mm ). Housing: DO-201. Housing (JEDEC standard): -. VRRM: 800V. Forward current (AV): 5A. Average Rectified Current per Diode: 5A. IFSM: 200A. Forward current [A]: 5A. Housing (according to data sheet): DO-201 ( 7.5x5.4mm ). Assembly/installation: PCB through-hole mounting. Close voltage (repetitive) Vrrm [V]: 800V. Component family: Fast rectifier diode (tr<500ns). Conduction voltage (threshold voltage): 1.3V. Configuration: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Diode Configuration: independent. Diode type: rectifier diode. Driving current: 20A. Forward Voltage (Max): <1.3V / 5A. Forward voltage Vf (min): 1.3V. Function: silicon fast rectifier diode. Ifsm [A]: 220A. Information: -. Leakage current on closing Ir [A]: 5uA. MRI (max): 10uA. MSL: -. Max reverse voltage: 800V. Max temperature: +175°C.. Mounting Type: THT. Number of terminals: 2. Number of terminals: 2. Operating temperature: -50...+175°C. Packaging: Ammo Pack. Properties of semiconductor: High-speed switching. Pulse current max.: 200A. Quantity per case: 1. Reaction time: 200ns. Reverse Leakage Current: <5uA / 800V. Reverse Recovery Time (Max): 200ns. RoHS: yes. Semiconductor material: silicon. Semiconductor structure: diode. Series: BY500. Spec info: Ifsm--200App t=10mS. Switching speed (regeneration time) tr [sec.]: 200 ns. Threshold voltage Vf (max): 1.3V. Trr Diode (Min.): 200 ns. [V]: 1.3V @ 5A. Original product from manufacturer: Diotec Semiconductor. Quantity in stock updated on 10/31/2025, 08:15

Technical documentation (PDF)
BY500-800
45 parameters
Housing
DO-201
VRRM
800V
Forward current (AV)
5A
Average Rectified Current per Diode
5A
IFSM
200A
Forward current [A]
5A
Housing (according to data sheet)
DO-201 ( 7.5x5.4mm )
Assembly/installation
PCB through-hole mounting
Close voltage (repetitive) Vrrm [V]
800V
Component family
Fast rectifier diode (tr<500ns)
Conduction voltage (threshold voltage)
1.3V
Configuration
PCB through-hole mounting
Dielectric structure
Anode-Cathode
Diode Configuration
independent
Diode type
rectifier diode
Driving current
20A
Forward Voltage (Max)
<1.3V / 5A
Forward voltage Vf (min)
1.3V
Function
silicon fast rectifier diode
Ifsm [A]
220A
Leakage current on closing Ir [A]
5uA
MRI (max)
10uA
Max reverse voltage
800V
Max temperature
+175°C.
Mounting Type
THT
Number of terminals
2
Number of terminals
2
Operating temperature
-50...+175°C
Packaging
Ammo Pack
Properties of semiconductor
High-speed switching
Pulse current max.
200A
Quantity per case
1
Reaction time
200ns
Reverse Leakage Current
<5uA / 800V
Reverse Recovery Time (Max)
200ns
RoHS
yes
Semiconductor material
silicon
Semiconductor structure
diode
Series
BY500
Spec info
Ifsm--200App t=10mS
Switching speed (regeneration time) tr [sec.]
200 ns
Threshold voltage Vf (max)
1.3V
Trr Diode (Min.)
200 ns
[V]
1.3V @ 5A
Original product from manufacturer
Diotec Semiconductor

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