BAW56, SOT-23 ( TO-236 ), 200mA, 1A, SOT-23 ( TO236 ), 80V. Housing: SOT-23 ( TO-236 ). Forward current (AV): 200mA. IFSM: 1A. Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 80V. Assembly/installation: surface-mounted component (SMD). Cj: 2pF. Conduction voltage (threshold voltage): 1.25V. Dielectric structure: common anode. Diode type: switching diode. Forward voltage Vf (min): 0.715V. Function: Ultra High Speed Switching. MRI (max): 50uA. MRI (min): 0.15uA. Marking on the case: A1s. Max reverse voltage: 70V, 85V. Note: screen printing/SMD code A1s. Number of terminals: 3. Power: 350mW. Properties of semiconductor: super fast switching. Pulse current max.: 2A. Quantity per case: 2. Reaction time: 4ns, 6ns. RoHS: yes. Semiconductor material: silicon. Semiconductor type: diode. Spec info: Ifsm--4.5A t=1us, 1A t=1ms. Temperature: +150°C. Threshold voltage Vf (max): 1.25V. Threshold voltage: 1V. Trr Diode (Min.): 4 ns. Original product from manufacturer: Infineon Technologies. Minimum quantity: 10. Quantity in stock updated on 11/13/2025, 18:01