BAV99, SOT-23 ( TO-236 ), TO-236AB, 215mA, 500A, 0.12A, 0.215A, SOT-23 ( TO236 ), 70V. Housing: SOT-23 ( TO-236 ). Housing (JEDEC standard): TO-236AB. Forward current (AV): 215mA. IFSM: 500A. Average Rectified Current per Diode: 0.12A. Forward current [A]: 0.215A. Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 70V. Assembly/installation: surface-mounted component (SMD). Close voltage (repetitive) Vrrm [V]: 85V. Component family: dual small-signal diode. Surface mount (SMD). Conduction voltage (threshold voltage): 1.25V. Configuration: surface-mounted component (SMD). Dielectric structure: Common anode-cathode (midpoint). Diode type: switching diode. Driving current: 0.3A. Forward Voltage (Max): <1.0V / 0.05A. Forward voltage Vf (min): 750mV. Ifsm [A]: 2A. Information: -. Leakage current on closing Ir [A]: 30nA..50uA. Marking on the case: A7w. Max reverse voltage: 85V. Max temperature: +150°C.. Mounting Type: SMD. Note: dual silicon diode. Number of terminals: 3. Number of terminals: 3. Power: 350mW. Properties of semiconductor: super fast switching. Pulse current max.: 2A. Quantity per case: 2. Reaction time: 4ns. Reverse Leakage Current: 30nA / 25V. Reverse Recovery Time (Max): 4ns. RoHS: yes. Semiconductor material: silicon. Semiconductor structure: 2 diodes connected in series. Semiconductor type: diode. Series: BAV. Spec info: IFSM--t=1.0us 2A, t=1.0ms 1A. Switching speed (regeneration time) tr [sec.]: 4 ns. Temperature: +150°C. Threshold voltage Vf (max): 1.25V. Trr Diode (Min.): 6us. [V]: 0.855V @ 10mA. Original product from manufacturer: Nexperia. Minimum quantity: 10. Quantity in stock updated on 10/31/2025, 08:15