BAV70, SOT-23 ( TO-236 ), TO-236AB, 215mA, 0.215A, 450mA, SOT-23 ( TO236 ), 100V. Housing: SOT-23 ( TO-236 ). Housing (JEDEC standard): TO-236AB. Forward current (AV): 215mA. Forward current [A]: 0.215A. IFSM: 450mA. Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 100V. Assembly/installation: surface-mounted component (SMD). Cj: 1.5pF. Close voltage (repetitive) Vrrm [V]: 70V. Component family: dual small-signal diode. Surface mount (SMD). Conduction voltage (threshold voltage): 1.25V. Configuration: surface-mounted component (SMD). Dielectric structure: Common Cathode. Diode type: switching diode. Forward voltage Vf (min): 715mV. Function: Fast Switching Speed. Ifsm [A]: 1A. Leakage current on closing Ir [A]: 150nA..50uA. MRI (max): 100uA. MRI (min): 30nA. Marking on the case: A4W. Max reverse voltage: 100V, 70V. Max temperature: +150°C.. Note: screen printing/SMD code A4p_A4t_A4w. Number of terminals: 3. Number of terminals: 3. Operating temperature: -65...+150°C. Power: 350mW. Properties of semiconductor: super fast switching. Pulse current max.: 2A. Quantity per case: 2. Reaction time: 4ns, 6ns. RoHS: yes. Semiconductor material: silicon. Semiconductor type: diode. Spec info: Ifsm--4A t=1us, 1A t=1ms. Switching speed (regeneration time) tr [sec.]: 4 ns. Threshold voltage Vf (max): 1.25V. Threshold voltage: 1V. Trr Diode (Min.): 4 ns. [V]: 0.855V @ 10mA. Original product from manufacturer: Nxp Semiconductors. Minimum quantity: 10. Quantity in stock updated on 10/31/2025, 08:15