| +2500 rapidement | |
| Obsolete | |
| Out of stock | |
| Replacement | |
| Notif | |
| 12 in stock | |
| x2 |
BAT43, DO-35 ( SOD27 ), 30 v, 0.2A, 0.2A, 4A, 0.2A, DO-35
| +6106 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability! | |
| Equivalence available | |
| Quantity in stock: 1056 |
BAT43, DO-35 ( SOD27 ), 30 v, 0.2A, 0.2A, 4A, 0.2A, DO-35. Housing: DO-35 ( SOD27 ). Housing (JEDEC standard): -. VRRM: 30 v. Forward current (AV): 0.2A. Average Rectified Current per Diode: 0.2A. IFSM: 4A. Forward current [A]: 0.2A. Housing (according to data sheet): DO-35. Assembly/installation: PCB through-hole mounting. Cj: 7pF. Close voltage (repetitive) Vrrm [V]: 30 v. Component family: Small-signal Schottky diode. Conduction voltage (threshold voltage): 0.45V. Configuration: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Diode Configuration: independent. Diode type: Schottky rectifier diode. Forward Voltage (Max): <0.33V / 2mA. Forward voltage Vf (min): 0.26V. Ifsm [A]: 4A. Information: -. Leakage current on closing Ir [A]: 0.5uA..100uA. MRI (max): 100uA. MRI (min): 0.5uA. MSL: n/a. Max reverse voltage: 30V. Max temperature: +150°C.. Mounting Type: THT. Number of terminals: 2. Number of terminals: 2. Operating temperature: -65...+150°C. Pulse current max.: 4A. Quantity per case: 1. Reaction time: 5ns. Reverse Leakage Current: 0.5uA / 25V. Reverse Recovery Time (Max): 5ns. RoHS: yes. Semiconductor material: Sb. Semiconductor structure: diode. Series: BAT4. Spec info: IFSM--4Ap (t=/10ms). Switching speed (regeneration time) tr [sec.]: 5 ns. Threshold voltage Vf (max): 0.46V. Threshold voltage: 450mV, 0.45V. Trr Diode (Min.): 5 ns. [V]: 0.45V @ 15mA. Original product from manufacturer: Taiwan Semiconductor. Minimum quantity: 10. Quantity in stock updated on 11/13/2025, 12:18