BAS21, 200mA, 625mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 250V

BAS21, 200mA, 625mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 250V

Quantity
Unit price
10-49
0.0367$
50-99
0.0324$
100-499
0.0285$
500+
0.0206$
+12380 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 1957
Minimum: 10

BAS21, 200mA, 625mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 250V. Forward current (AV): 200mA. IFSM: 625mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 250V. Assembly/installation: surface-mounted component (SMD). Cj: 5pF. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 1V. Function: High Voltage Switching Diode. MRI (max): 100uA. MRI (min): 0.1uA. Marking on the case: JS. Note: screen printing/SMD code JS. Number of terminals: 3. Operating temperature: -55...+150°C. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: IFSM--t=1µs 9A, t=100µs 3A, t=10ms 1.7A. Threshold voltage Vf (max): 1.25V. Trr Diode (Min.): 50 ns. Original product from manufacturer: Nxp Semiconductors. Minimum quantity: 10. Quantity in stock updated on 11/13/2025, 18:01

Technical documentation (PDF)
BAS21
24 parameters
Forward current (AV)
200mA
IFSM
625mA
Housing
SOT-23 ( TO-236 )
Housing (according to data sheet)
SOT-23 ( TO236 )
VRRM
250V
Assembly/installation
surface-mounted component (SMD)
Cj
5pF
Dielectric structure
Anode-Cathode
Forward voltage Vf (min)
1V
Function
High Voltage Switching Diode
MRI (max)
100uA
MRI (min)
0.1uA
Marking on the case
JS
Note
screen printing/SMD code JS
Number of terminals
3
Operating temperature
-55...+150°C
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
IFSM--t=1µs 9A, t=100µs 3A, t=10ms 1.7A
Threshold voltage Vf (max)
1.25V
Trr Diode (Min.)
50 ns
Original product from manufacturer
Nxp Semiconductors
Minimum quantity
10