893-399016AB, 2A, 50A, DO-204, DO-204AP, 50V

893-399016AB, 2A, 50A, DO-204, DO-204AP, 50V

Quantity
Unit price
1-4
0.48$
5-24
0.45$
25-49
0.43$
50+
0.41$
Equivalence available
Quantity in stock: 5

893-399016AB, 2A, 50A, DO-204, DO-204AP, 50V. Forward current (AV): 2A. IFSM: 50A. Housing: DO-204. Housing (according to data sheet): DO-204AP. VRRM: 50V. Assembly/installation: PCB through-hole mounting. Cj: 15pF. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 1.3V. Function: GLASS PASSIVATED FAST SWITCHING RECTIFIER. MRI (max): 5uA. MRI (min): 1uA. Marking on the case: RG2A. Note: SAMSUNG. Number of terminals: 2. Operating temperature: -65...+175°C. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: IFMS 50Ap. Threshold voltage Vf (max): 1.3V. Trr Diode (Min.): 150 ns. Original product from manufacturer: General Semiconductor. Quantity in stock updated on 10/31/2025, 08:27

893-399016AB
23 parameters
Forward current (AV)
2A
IFSM
50A
Housing
DO-204
Housing (according to data sheet)
DO-204AP
VRRM
50V
Assembly/installation
PCB through-hole mounting
Cj
15pF
Dielectric structure
Anode-Cathode
Forward voltage Vf (min)
1.3V
Function
GLASS PASSIVATED FAST SWITCHING RECTIFIER
MRI (max)
5uA
MRI (min)
1uA
Marking on the case
RG2A
Note
SAMSUNG
Number of terminals
2
Operating temperature
-65...+175°C
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
IFMS 50Ap
Threshold voltage Vf (max)
1.3V
Trr Diode (Min.)
150 ns
Original product from manufacturer
General Semiconductor

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