4N33M

Quantity	excl. VAT	VAT incl.
1 - 9	0.69$	0.69$
10 - 24	0.65$	0.65$
25 - 49	0.62$	0.62$
50 - 99	0.58$	0.58$
100 - 150	0.53$	0.53$

Quantity	U.P
1 - 9	0.69$	0.69$
10 - 24	0.65$	0.65$
25 - 49	0.62$	0.62$
50 - 99	0.58$	0.58$
100 - 150	0.53$	0.53$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 150

Set of 1

4N33M. CTR: 500 %. Diode IF: 80mA. Courant IF Diode (peak): 3A. Diode Power: 150mW. Diode threshold voltage: 1.2V. Minimum hFE gain: 5000. Collector current: 50mA. Output: darlington transistor output. Pd (Power Dissipation, Max): 150mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-6. Operating temperature: -55...+100°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 60V. VECO: 5V. VRRM: 5300V. Number of terminals: 6. Function: Phototransistor Output, With Base Connection. Spec info: ton 5us, toff 100us. Quantity in stock updated on 23/12/2024, 19:25.

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Delivery in 2-3 days, with postal tracking!