4N33M. Assembly/installation: PCB through-hole mounting. CTR: 500 %. Collector current: 50mA. Collector/emitter voltage Vceo: 60V. Courant IF Diode (peak): 3A. Diode IF: 80mA. Diode Power: 150mW. Diode threshold voltage: 1.2V. Function: Phototransistor Output, With Base Connection. Housing (according to data sheet): DIP-6. Housing: DIP. Maximum saturation voltage VCE(sat): 1V. Minimum hFE gain: 5000. Number of terminals: 6. Operating temperature: -55...+100°C. Output: darlington transistor output. Pd (Power Dissipation, Max): 150mW. RoHS: yes. Spec info: ton 5us, toff 100us. VECO: 5V. VRRM: 5300V. Vcbo: 100V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:29