30BQ100, 3A, 800A (tp=5us), 70A (tp=10ms), DO-214, SMC (8.1x6.2x2.6mm), 100V

30BQ100, 3A, 800A (tp=5us), 70A (tp=10ms), DO-214, SMC (8.1x6.2x2.6mm), 100V

Quantity
Unit price
1-4
0.40$
5-49
0.34$
50-99
0.30$
100-199
0.26$
200+
0.21$
Quantity in stock: 3490

30BQ100, 3A, 800A (tp=5us), 70A (tp=10ms), DO-214, SMC (8.1x6.2x2.6mm), 100V. Forward current (AV): 3A. IFSM: 800A (tp=5us), 70A (tp=10ms). Housing: DO-214. Housing (according to data sheet): SMC (8.1x6.2x2.6mm). VRRM: 100V. Assembly/installation: surface-mounted component (SMD). Cj: 115pF. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 0.62V. MRI (max): 5mA. MRI (min): 0.5mA. Marking on the case: 3J. Number of terminals: 2. Operating temperature: -55...+175°C. Quantity per case: 1. RoHS: yes. Semiconductor material: Sb. Threshold voltage Vf (max): 0.96V. Original product from manufacturer: Vishay. Quantity in stock updated on 10/31/2025, 07:54

Technical documentation (PDF)
30BQ100
19 parameters
Forward current (AV)
3A
IFSM
800A (tp=5us), 70A (tp=10ms)
Housing
DO-214
Housing (according to data sheet)
SMC (8.1x6.2x2.6mm)
VRRM
100V
Assembly/installation
surface-mounted component (SMD)
Cj
115pF
Dielectric structure
Anode-Cathode
Forward voltage Vf (min)
0.62V
MRI (max)
5mA
MRI (min)
0.5mA
Marking on the case
3J
Number of terminals
2
Operating temperature
-55...+175°C
Quantity per case
1
RoHS
yes
Semiconductor material
Sb
Threshold voltage Vf (max)
0.96V
Original product from manufacturer
Vishay