1N5817, DO-204, 1A, 25A, DO-204AL ( 5.2x2.7mm ), 20V

1N5817, DO-204, 1A, 25A, DO-204AL ( 5.2x2.7mm ), 20V

Quantity
Unit price
10-49
0.0503$
50-99
0.0433$
100-199
0.0393$
200+
0.0320$
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Equivalence available
Quantity in stock: 143
Minimum: 10

1N5817, DO-204, 1A, 25A, DO-204AL ( 5.2x2.7mm ), 20V. Housing: DO-204. Forward current (AV): 1A. IFSM: 25A. Housing (according to data sheet): DO-204AL ( 5.2x2.7mm ). VRRM: 20V. Assembly/installation: PCB through-hole mounting. Cj: 110pF. Conditioning: Ammo Pack. Dielectric structure: Anode-Cathode. Diode type: Schottky rectifier diode. Driving current: 1A. Forward voltage Vf (min): 0.45V. Function: SCHOTTKY BARRIER RECTIFIER. Max reverse voltage: 20V. Number of terminals: 2. Operating temperature: -65...+125°C. Packaging: Ammo Pack. Pulse current max.: 30A. Quantity per case: 1. RoHS: yes. Semiconductor material: Sb. Semiconductor structure: diode. Threshold voltage Vf (max): 0.75V. Threshold voltage: 450mV. Original product from manufacturer: General Semiconductor. Minimum quantity: 10. Quantity in stock updated on 11/13/2025, 12:18

Technical documentation (PDF)
1N5817
26 parameters
Housing
DO-204
Forward current (AV)
1A
IFSM
25A
Housing (according to data sheet)
DO-204AL ( 5.2x2.7mm )
VRRM
20V
Assembly/installation
PCB through-hole mounting
Cj
110pF
Conditioning
Ammo Pack
Dielectric structure
Anode-Cathode
Diode type
Schottky rectifier diode
Driving current
1A
Forward voltage Vf (min)
0.45V
Function
SCHOTTKY BARRIER RECTIFIER
Max reverse voltage
20V
Number of terminals
2
Operating temperature
-65...+125°C
Packaging
Ammo Pack
Pulse current max.
30A
Quantity per case
1
RoHS
yes
Semiconductor material
Sb
Semiconductor structure
diode
Threshold voltage Vf (max)
0.75V
Threshold voltage
450mV
Original product from manufacturer
General Semiconductor
Minimum quantity
10

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