| +2500 rapidement | |
| Obsolete | |
| Out of stock | |
| Replacement | |
| Notif | |
| 12 in stock | |
| x2 |
1N5396, 1.5A, 50A, DO-15, DO-15 ( 3.3x6.4mm ), 500V
Quantity
Unit price
10-49
0.0420$
50-99
0.0374$
100-199
0.0343$
200+
0.0300$
| Equivalence available | |
| Quantity in stock: 522 |
1N5396, 1.5A, 50A, DO-15, DO-15 ( 3.3x6.4mm ), 500V. Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.3x6.4mm ). VRRM: 500V. Assembly/installation: PCB through-hole mounting. Cj: 20pF. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 1.1V. Function: high Current Capability, Low Forward Voltage Drop. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. Operating temperature: -65...+150°C. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: IFSM--50Ap, t=8.3mS. Threshold voltage Vf (max): 1.1V. Original product from manufacturer: Diodes Inc. Minimum quantity: 10. Quantity in stock updated on 11/13/2025, 14:24
1N5396
21 parameters
Forward current (AV)
1.5A
IFSM
50A
Housing
DO-15
Housing (according to data sheet)
DO-15 ( 3.3x6.4mm )
VRRM
500V
Assembly/installation
PCB through-hole mounting
Cj
20pF
Dielectric structure
Anode-Cathode
Forward voltage Vf (min)
1.1V
Function
high Current Capability, Low Forward Voltage Drop
MRI (max)
50uA
MRI (min)
5uA
Number of terminals
2
Operating temperature
-65...+150°C
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
IFSM--50Ap, t=8.3mS
Threshold voltage Vf (max)
1.1V
Original product from manufacturer
Diodes Inc
Minimum quantity
10