1N4448GEG, DO35

1N4448GEG, DO35

Quantity
Unit price
1-9
0.23$
10-49
0.0714$
50-99
0.0446$
100-199
0.0318$
200+
0.0252$
Quantity in stock: 1000

1N4448GEG, DO35. Housing: DO35. Assembly/installation: THT. Conduction voltage (threshold voltage): 1V. Diode type: switching diode. Max reverse voltage: 100V. Packaging: Ammo Pack. Power: 0.5W. Properties of semiconductor: super fast switching. Pulse current max.: 4A. Reaction time: 4ns. RoHS: no. Semiconductor structure: diode. Semiconductor type: diode. Threshold voltage: 1V. Original product from manufacturer: DC Components. Quantity in stock updated on 11/02/2025, 23:42

1N4448GEG
15 parameters
Housing
DO35
Assembly/installation
THT
Conduction voltage (threshold voltage)
1V
Diode type
switching diode
Max reverse voltage
100V
Packaging
Ammo Pack
Power
0.5W
Properties of semiconductor
super fast switching
Pulse current max.
4A
Reaction time
4ns
RoHS
no
Semiconductor structure
diode
Semiconductor type
diode
Threshold voltage
1V
Original product from manufacturer
DC Components