| +2500 rapidement | |
| Obsolete | |
| Out of stock | |
| Replacement | |
| Notif | |
| 12 in stock | |
| x2 |
1N4448, DO-35 ( SOD27 ), 0.15A, 0.45A, 0.3A, DO-35, 100V
Quantity
Unit price
10-49
0.0290$
50-99
0.0256$
100-499
0.0231$
500-999
0.0184$
1000+
0.0131$
| +5759 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability! | |
| Equivalence available | |
| Quantity in stock: 3913 |
1N4448, DO-35 ( SOD27 ), 0.15A, 0.45A, 0.3A, DO-35, 100V. Housing: DO-35 ( SOD27 ). Forward current (AV): 0.15A. Housing (JEDEC standard): -. IFSM: 0.45A. Forward current [A]: 0.3A. Housing (according to data sheet): DO-35. VRRM: 100V. Assembly/installation: PCB through-hole mounting. Cj: 4pF. Close voltage (repetitive) Vrrm [V]: 100V. Component family: Small-signal silicon diode. Configuration: PCB through-hole mounting. Ifsm [A]: 2A. Leakage current on closing Ir [A]: 25nA..5uA. MRI (max): 5uA. MRI (min): 25nA. Max temperature: +150°C.. Number of terminals: 2. Number of terminals: 2. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Semiconductor material: silicon. Spec info: Ifsm--2A, Pluse width = 1uS. Switching speed (regeneration time) tr [sec.]: 4 ns. Threshold voltage Vf (max): 1V. Trr Diode (Min.): 4 ns. [V]: 0.7V @ 5mA. Original product from manufacturer: Taiwan Semiconductor. Minimum quantity: 10. Quantity in stock updated on 12/14/2025, 01:04
1N4448
29 parameters
Housing
DO-35 ( SOD27 )
Forward current (AV)
0.15A
IFSM
0.45A
Forward current [A]
0.3A
Housing (according to data sheet)
DO-35
VRRM
100V
Assembly/installation
PCB through-hole mounting
Cj
4pF
Close voltage (repetitive) Vrrm [V]
100V
Component family
Small-signal silicon diode
Configuration
PCB through-hole mounting
Ifsm [A]
2A
Leakage current on closing Ir [A]
25nA..5uA
MRI (max)
5uA
MRI (min)
25nA
Max temperature
+150°C.
Number of terminals
2
Number of terminals
2
Operating temperature
-65...+150°C
Pd (Power Dissipation, Max)
0.5W
RoHS
yes
Semiconductor material
silicon
Spec info
Ifsm--2A, Pluse width = 1uS
Switching speed (regeneration time) tr [sec.]
4 ns
Threshold voltage Vf (max)
1V
Trr Diode (Min.)
4 ns
[V]
0.7V @ 5mA
Original product from manufacturer
Taiwan Semiconductor
Minimum quantity
10